Method for fabricating interfacial oxide in a transistor and related structure

ABSTRACT

A gas is supplied at a certain partial pressure for a chemical reaction with a top surface of a base in a transistor. The top surface of the base is heated to a certain temperature to promote the chemical reaction. For example, the gas can be oxygen, the base can be an epitaxial single crystal silicon-germanium base of a heterojunction bipolar transistor (“HBT”), and the chemical reaction can be oxidation of the silicon in the top surface of the silicon-germanium base. The partial pressure of oxygen is maintained at 0.1 atmosphere and the top surface of the base is heated using rapid thermal processing (“RTP”) to a temperature of 500° C. The chemical reaction forms a dielectric layer on the top surface of the base. For example, using oxygen as stated above, a dielectric layer of silicon oxide (“interfacial oxide”) is formed. Controlling the thickness and density of the interfacial oxide causes the gain of the transistor to be as desired. For example, using oxygen in the silicon-germanium HBT at 0.1 atmosphere partial pressure, and RTP to heat the top surface of the base of the HBT to 500 C., an interfacial oxide is formed with thickness approximately 9.0 to 13.0 Angstroms and area density in a range of approximately 1*10 15  to 4*10 15  atoms per square centimeter, which causes the gain of the HBT to be the desired value of approximately 100.0.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the field of fabrication ofsemiconductor devices. More specifically, the invention relates to thefabrication of transistors and, in particular, fabrication ofsilicon-germanium transistors.

2. Related Art

In a heterojunction bipolar transistor, or HBT, a thin silicon-germaniumlayer is grown as the base of a bipolar transistor on a silicon wafer.The silicon-germanium HBT has significant advantages in speed, frequencyresponse, and gain when compared to a conventional silicon bipolartransistor. Speed and frequency response can be compared by the cutofffrequency which, simply stated, is the frequency where the gain of atransistor is drastically reduced. More technically, the current gainapproaches a value of one as the frequency of operation of thetransistor approaches the cutoff frequency. Cutoff frequencies in excessof 100 GHz have been achieved for the HBT, which are comparable to themore expensive GaAs. Previously, silicon-only devices have not beencompetitive for use where very high speed and frequency response arerequired.

The higher gain, speeds, and frequency response of the HBT have beenachieved as a result of certain advantages of silicon-germanium notavailable with pure silicon, for example, narrower band gap, and reducedresistivity. Silicon-germanium may be epitaxially grown on siliconwafers using conventional silicon processing and tools, and allows oneto engineer device properties such as the band gap, energy bandstructure, and mobilities. For example, it is known in the art thatgrading the concentration of germanium in the silicon-germanium basebuilds into the HBT device an electric field, which accelerates thecarriers across the base, thereby increasing the speed of the HBT devicecompared to a silicon-only device. One method for fabricating siliconand silicon-germanium devices is by chemical vapor deposition (“CVD”). Areduced pressure chemical vapor deposition technique, or RPCVD, used tofabricate the HBT device allows for a controlled grading of germaniumconcentration across the base layer. As already noted, speeds in therange of approximately 100 GHz have been demonstrated forsilicon-germanium devices, such as the HBT.

A polycrystalline silicon emitter can be formed above the epitaxiallygrown single crystal silicon-germanium base. There are several possiblemethods of forming a polycrystalline silicon emitter. For example, oneapproach is to form a layer of some material which can be selectivelyetched relative to the single crystal silicon-germanium base and open a“window” in that material in which to deposit the polycrystallinesilicon for the emitter. After the polycrystalline silicon is depositedfor the emitter, the excess material is etched away selectively to thesilicon-germanium base, forming the polycrystalline silicon emitterabove the single crystal silicon-germanium base.

Prior to formation of the emitter, there is typically a thin layer ofsilicon oxide that is grown on the surface of the silicon-germaniumbase. This thin layer of silicon oxide is generally desirable to remainon the surface of the base. For example, if this thin layer of siliconoxide is completely removed from the surface of the base and the siliconfor the emitter is deposited directly on top of the single crystal base,the silicon aligns with the underlying crystal structure and a singlecrystal epitaxial emitter is formed rather than the desiredpolycrystalline emitter. Furthermore, the resulting bipolar transistorhas unacceptably low gain. Gain, simply stated, is the ratio ofcollector current, I_(c), divided by base current, I_(b), i.e. gainequals I_(c)/I_(b).

As stated above, by forming a thin silicon oxide layer on top of thesingle crystal base before depositing silicon for the emitter, thedesired polycrystalline emitter is formed. Because the thin siliconoxide layer is formed at the interface between the single crystal baseand the polycrystalline emitter, it is also referred to as “interfacialoxide.” The interfacial oxide has the effect of increasing the gain ofthe bipolar transistor. The interfacial oxide across the emitter opposesthe flow of minority carriers so that the base current in one directionis reduced, while the collector current is largely unaffected.Therefore, I_(c)/I_(b), which is the gain of the bipolar transistor, isincreased.

In general, making the interfacial oxide layer thicker increases thegain of the bipolar transistor, and conversely, making the interfacialoxide layer thinner decreases the gain. As remarked above, if nointerfacial oxide is formed, the gain is unacceptably low. Aninterfacial oxide layer that is too thick increases the gain butadversely affects the cutoff frequency, causing the cutoff frequency tobe too low. For the silicon-germanium HBT, an optimum gain isapproximately 100.0. Therefore, it is desirable to fabricate asilicon-germanium HBT with the thickness of the interfacial oxide in anoptimum range, neither too low nor too high, such that the gain of theHBT is approximately 100.0.

Other attributes, besides thickness, of the interfacial dielectric thataffect gain of the bipolar transistor are the composition of theinterfacial dielectric, and its density. For example, in thesilicon-germanium HBT, the composition is silicon oxide. Otherdielectric materials could be used, for example, silicon oxynitride.Density can be measured by secondary ion mass spectrometry (“SIMS”). Forexample, with interfacial oxide, a sample of the interfacial oxide isbombarded with ions to remove ions from the sample. The ions are countedto determine the atomic density of the interfacial oxide. The density ismeasured as “area density” in units of atoms per square centimeter. Ingeneral, there is a trade-off between thickness and area density of theinterfacial oxide with respect to the gain of the bipolar transistor. Ifa technique for forming the interfacial oxide produces a lower densityoxide, the oxide must be made thicker to achieve the same gain as thegain achieved by an interfacial oxide that is thinner and higherdensity. Moreover, lower density oxide is more prone to cause epitaxialre-alignment of the polycrystalline emitter. Because of this, it is notdesirable to form very low-density oxides. Thus, by altering thecomposition, thickness, and density of the interfacial dielectric, thegain of the bipolar transistor can be controlled.

Conversely, variation in composition, thickness, and density of theinterfacial dielectric can result in unacceptable variation in valuesfor the gain of the bipolar transistor. Variation in values for the gaincan cause unpredictable performance, which makes circuit designdifficult. Thus it is desirable to form the interfacial dielectric in auniform manner so that composition, thickness, and density areconsistent for devices on the same wafer, and are also consistent andrepeatable from wafer to wafer.

For example, one method for forming interfacial silicon oxide uses a wetbench process which comprises flowing ozone in water across the wafersurface; the ozone reacts with the wafer surface to form oxide on thewafer surface. Variation in gain from approximately 50.0 to 300.0 fordevices on the same wafer using the wet bench process was found to beunacceptable. Efforts to improve the ozone distribution in the wet benchprocess to form a more uniform interfacial oxide have not provided thedesired uniformity across the wafer or from wafer to wafer.

Another method for forming interfacial oxide is by controlling oxidationduring the “drive-in” or “push-in” oxidation step of the doping process.Oxygen or water vapor is provided in the chamber used to heat the waferfor the “push-in” diffusion of dopants, and reaction of the oxygen withthe wafer surface oxidizes the surface. However, heating of the waferinvolved during “push-in” oxidation can contribute to unwanted devicechanges. For example, boron used to dope the silicon-germanium base ofthe HBT diffuses rapidly; excess diffusion of boron dopant slows theoperation of the HBT. Thus, it is important in silicon-germaniumprocessing to keep temperature transitions, the number of hightemperature processing steps, and the time involved in each step to aminimum, i.e. the thermal budget must be minimized. Interfacial oxidesformed during “push-in” oxidation have been too thick, resulting invalues of gain in the HBT that are unacceptably high. Efforts to controlinterfacial oxide thickness during “push-in” oxidation have not providedthe desired uniformity across the wafer or from wafer to wafer.

Another method for forming interfacial oxide is one involving rapidthermal processing (“RTP”). The method is described in “Single WaferRapid Thermal CVD for Poly-Emitter Bipolar and BiCMOS Devices” by AhmedKermani and Fred Wong in Solid State Technology, July 1990, at page 41.The article describes a reduced pressure, 900° C. temperature, rapidthermal oxidation technique to form an oxide layer. The high temperatureof the technique invokes the concerns, discussed above, regardingthermal budget. In addition to excess boron diffusion, discussed above,the high 900° C. temperature can also damage the silicon-germaniumcrystal. The high temperature can cause strain relaxation in thestrained silicon-germanium crystal layers, negating the benefits, forexample, the increased speed, that the HBT derives from the strainedsilicon-germanium crystal layers.

There is thus a need in the art for forming an interfacial oxide whichaccurately controls the resulting gain of the bipolar transistor. Thereis also need in the art for forming an interfacial oxide of precisethickness and density. Further, there is a need in the art forfabricating an interfacial oxide which is uniform from die to die acrosseach wafer and also uniform and repeatable from wafer to wafer.Moreover, there is need in the art for a method of fabricating aninterfacial oxide which reduces or improves thermal budget.

SUMMARY OF THE INVENTION

The present invention is directed to method for fabricating interfacialoxide in a transistor and related structure. The invention overcomes theneed in the art for forming an interfacial oxide which accuratelycontrols the resulting gain of the transistor. The invention controlsformation of interfacial oxide so that an interfacial oxide of precisethickness and density is formed. Further, the invention controlsformation of interfacial oxide so that an interfacial oxide is formedwhich is uniform from die to die across each wafer and also uniform andrepeatable from wafer to wafer. Moreover, the invention provides amethod of fabricating an interfacial oxide which reduces or improvesthermal budget.

According to the invention, a gas is supplied at a certain partialpressure for a chemical reaction with a top surface of a base in atransistor. The top surface of the base is heated to a certaintemperature to promote the chemical reaction. For example, the gas canbe oxygen, the base can be an epitaxial single crystal silicon-germaniumbase of a heterojunction bipolar transistor (“HBT”), and the chemicalreaction can be oxidation of the silicon in the top surface of thesilicon-germanium base. In one embodiment of the invention, the partialpressure of oxygen is maintained at 0.1 atmosphere and the top surfaceof the base is heated using rapid thermal processing (“RTP”) to atemperature of 500° C.

The chemical reaction forms a dielectric layer on the top surface of thebase by the chemical reaction of the gas with the top surface of thebase, at the certain partial pressure and the certain temperature. Forexample, using oxygen as stated above, a dielectric layer of siliconoxide (“interfacial oxide”) is formed. Controlling the thickness anddensity of the interfacial oxide causes the gain of the transistor to beas desired. For a silicon-germanium HBT, a gain of approximately 100.0is desired. For example, using oxygen in the silicon-germanium HBT at0.1 atmosphere partial pressure, and RTP to heat the top surface of thebase of the HBT to 500 C., an interfacial oxide is formed with thicknessapproximately 9.0 to 13.0 Angstroms and area density in a range ofapproximately 1*10¹⁵ to 4*10¹⁵ atoms per square centimeter, which causesthe gain of the HBT to be the desired value of approximately 100.0.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross sectional view of some of the features of anNPN HBT prior to application of the steps taken to implement anembodiment of the present invention.

FIG. 2 shows a flowchart illustrating the steps taken to implement anembodiment of the present invention.

FIG. 3A illustrates cross sectional views, which include portions of asilicon wafer processed according to an embodiment of the invention,corresponding to certain steps of FIG. 2.

FIG. 3B illustrates cross sectional views, which include portions of asilicon wafer processed according to an embodiment of the invention,corresponding to certain steps of FIG. 2.

FIG. 4 illustrates a cross sectional view of some of the features of anNPN HBT fabricated in accordance with one embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to method for fabricating interfacialoxide in a transistor and related structure. The following descriptioncontains specific information pertaining to the implementation of thepresent invention. One skilled in the art will recognize that thepresent invention may be implemented in a manner different from thatspecifically discussed in the present application. Moreover, some of thespecific details of the invention are not discussed in order not toobscure the invention. The specific details not described in the presentapplication are within the knowledge of a person of ordinary skill inthe art.

The drawings in the present application and their accompanying detaileddescription are directed to merely example embodiments of the invention.To maintain brevity, other embodiments of the invention which use theprinciples of the present invention are not specifically described inthe present application and are not specifically illustrated by thepresent drawings.

FIG. 1 shows exemplary structure 100, which is used to describe oneembodiment of the present invention. Certain details and features havebeen left out of FIG. 1 which are apparent to a person of ordinary skillin the art. Structure 100 includes collector 102 and base 120 for asilicon-germanium heterojunction bipolar transistor (“HBT”). Collector102 is N-type single crystal silicon, which can be formed using a dopantdiffusion process in a manner known in the art. Base 120 is P-typesilicon-germanium single crystal deposited epitaxially in a“nonselective” RPCVD process. As seen in FIG. 1, base 120 is situated ontop of, and forms a junction with, collector 102. Base contact 122 ispolycrystalline silicon-germanium deposited epitaxially in a“nonselective” RPCVD process. Base 120 and base contact 122 connect witheach other at interface 123 between the contact polycrystalline materialand the base single crystal material. Base 120 has a top surface 124.

In order to aid in formation of an emitter, etch stop layer 142,amorphous silicon layer 144, and antireflective coating (“ARC”) 146 havebeen formed on top surface 124 of base 120 and over the top of basecontact 122 as shown in FIG. 1. For example, etch stop layer 142 can besilicon oxide and ARC 146 can be a silicon oxynitride antireflectivecoating. A “window” has been opened in etch stop layer 142, amorphoussilicon layer 144, and ARC 146 exposing a portion of top surface 124 ofbase 120. The width of the opening determines emitter width 152. Emitterwidth 152 is indicated in structure 100 by a pair of dashed lines andarrows and the words “emitter width.” It is an object of one embodimentof the invention as described below to form an interfacial oxide on theexposed portion of top surface 124 of base 120. A polycrystallinesilicon emitter is then formed on top of the interfacial oxide. Byaddition and formation of junctions and other structures in a mannerknown in the art, an NPN HBT is formed which includes collector 102 andbase 120.

As seen in FIG. 1, buried layer 106, which is composed of N+ typematerial—meaning that it is relatively heavily doped N-type material—isformed in silicon substrate 107 in a manner known in the art. Collectorsinker 108, also composed of N+ type material, is formed by diffusion ofheavily concentrated dopants from the surface of collector sinker 108down to buried layer 106. Buried layer 106, along with collector sinker108, provide a low resistance electrical pathway from collector 102through buried layer 106 and collector sinker 108 to a collector contact(the collector contact is not shown in any of the Figures). Deeptrenches 112 and field oxide isolation regions 114, 115, and 116composed of silicon oxide (SiO₂) material are formed in a manner knownin the art. Deep trenches 112 and field oxide isolation regions 114,115, and 116 provide electrical isolation from other devices on siliconsubstrate 107 in a manner known in the art. Thus FIG. 1 shows thatstructure 100 includes several features and components used to form anHBT at a stage prior to formation of an interfacial oxide above base 120and addition of an emitter comprised of N-type polycrystalline silicon.

FIG. 2 shows flowchart 200, which describes the steps, according to oneembodiment of the invention, in processing a wafer which includesstructure 100 of FIG. 1. Certain details and features have been left outof flowchart 200 which are apparent to a person of ordinary skill in theart, for example, a step may consist of one or more substeps or mayinvolve specialized equipment, as known in the art.

Steps 270 through 280 indicated in flowchart 200 are sufficient todescribe one embodiment of the present invention, other embodiments ofthe invention may use steps different from those shown in flowchart 200.It is noted that the processing steps shown in flowchart 200 areperformed on a wafer which, prior to step 270, includes structure 100shown in FIG. 1. In particular the wafer includes top surface 124 ofbase 120 on which formation of an interfacial oxide is to take placeprior to addition of an emitter comprised of N-type polycrystallinesilicon.

Referring now to FIG. 3A, structure 300 of FIG. 3A shows, in greaterdetail, a portion of structure 100 of FIG. 1. Base 120 and top surface124 of base 120 of structure 100 are shown respectively in structure 300as base 320 and top surface 324 of base 320. Etch stop layer 142,amorphous silicon layer 144, ARC 146, and emitter width 152 of structure100 are shown respectively in structure 300 as etch stop layer 342,amorphous silicon layer 344, ARC 346, and emitter width 352. Etch stoplayer 342 is also marked in structure 300 with the words “etch stoplayer.” Amorphous silicon layer 344 is also marked in structure 300 withthe words “Amorphous Si” to indicate that it is composed of amorphoussilicon. ARC 346 is also marked in structure 300 with the designation“ARC.” Etch stop layer 342 is in a range of approximately 200.0 to 500.0Angstroms thick.

By way of example, a nominal value of 300.0 Angstroms is indicated onstructure 300 for the thickness of etch stop layer 342. However, it ismanifest that the exact thickness of etch stop layer 342 can be modifiedwithout departing from the scope of the present invention. Forsimplicity, other features such as base contact 122, interface 123,collector 102, buried layer 106, silicon substrate 107, collector sinker108, deep trenches 112, and field oxide isolation regions 114, 115, and116 are not shown in structure 300. Structure 300 thus shows a portionof a wafer, including top surface 324 of base 320 on which aninterfacial oxide is to be formed prior to addition of an emittercomprised of N-type polycrystalline silicon, before processing the waferaccording to one embodiment of the invention as shown in flow chart 200.In particular, structure 300 shows a portion of the wafer beforeprocessing step 270 of flowchart 200.

Referring to FIGS. 3A and 3B, each of structures 370, 372, 374, 376,378, and 380 of FIGS. 3A and 3B illustrates the result of performing, onstructure 300, steps 270, 272, 274, 276, 278, and 280, respectively, offlowchart 200 of FIG. 2. For example, structure 370 shows structure 300after the processing of step 270; structure 372 shows structure 370after the processing of step 272; and so forth.

Referring now to FIGS. 2 and 3A, step 270 of flowchart 200 comprisespre-cleaning top surface 324 of base 320, prior to forming aninterfacial oxide on top surface 324 of base 320 and addingpolycrystalline silicon to form an emitter 330. For example, thepre-clean can be a hydrogen fluoride clean. As another example, thepre-clean can be a hydrogen bake, i.e. heating the wafer in anatmosphere of hydrogen gas. The pre-clean is used to remove any residualcontaminants from top surface 324 of base 320. Examples of contaminantsinclude oxygen, water, and organo-metallic compounds. Referring to FIG.3A, the result of step 270 of flow chart 200 is illustrated by structure370. Structure 370 of FIG. 3A, then, shows structure 300 after pre-cleanof top surface 324 of base 320 on which formation of an interfacialoxide is to take place prior to addition of an emitter comprised ofN-type polycrystalline silicon.

Continuing with FIGS. 2 and 3A, step 272 of flowchart 200 comprisesheating the wafer to a pre-determined temperature and supplying oxygenat a pre-determined partial pressure. For example, the wafer can beheated in a rapid thermal processing (“RTP”) system, also referred to asa rapid thermal oxidation (“RTO”) system. The pre-determinedtemperature, for example, can be approximately 500° C. However, atemperature in the range of 300° C. to 650° C. can also be used. Theoxygen can be supplied in an inert gas at a partial pressure, forexample, of approximately 0.1 atmosphere. Generally, when a highertemperature is used, the oxygen partial pressure can be reduced; andconversely when a lower temperature is used, the oxygen partial pressurecan be increased. Thus, the oxygen partial pressure can varysignificantly from the 0.1 atmosphere which was given above as merely anexample. Moreover, although oxygen (O₂) is discussed as a specificexample in the present embodiment, other gases containing oxygen, suchas N₂O, NO, or Ozone, can also be used in other embodiments of thepresent invention.

Referring to FIG. 3A, the result of step 272 of flowchart 200 isillustrated by structure 372. Structure 372 of FIG. 3A, then, showsstructure 370, including top surface 324 of base 320 on which aninterfacial oxide is to be formed prior to addition of an emittercomprised of N-type polycrystalline silicon, after RTP heating topre-determined temperature and in a gas containing oxygen at apre-determined partial pressure.

Continuing with FIGS. 2 and 3A, step 274 of flowchart 200 comprisesforming interfacial oxide 332 on top surface 324 of base 320. The rapidthermal oxidation at the pre-determined temperature and partial pressureof oxygen causes formation of a layer of oxide of uniform thickness anddensity, comprising interfacial oxide 332, on top surface 324 of base320. In one embodiment of the invention, the thickness of interfacialoxide 332 is in a range of approximately 9.0 to 13.0 Angstroms and thearea density of interfacial oxide 332 is in a range of approximately1*10¹⁵ to 4*10¹⁵ atoms per square centimeter.

It is essential to achieving the desired gain of the silicon-germaniumHBT that the thickness and density of interfacial oxide 332 are uniform.Referring to FIG. 3A, the result of step 274 of flow chart 200 isillustrated by structure 374. By way of example, the thickness ofinterfacial oxide 332 is indicated on structure 374 by a nominal valueof 10.0 Angstroms for comparison with the nominal value of 300.0Angstroms indicated for the thickness of etch stop layer 342. However,it is manifest that the invention is not limited to these exactthicknesses. Structure 374 of FIG. 3A, then, shows structure 372, afterformation of interfacial oxide 332 on top surface 324 of base 320.

Referring now to FIGS. 2 and 3B, step 276 of flowchart 200 comprisesdepositing polycrystalline silicon to form emitter 330. For example, thepolycrystalline silicon can be deposited using RPCVD process. Emitter330 can be doped with arsenic using an ion implantation process. Thearsenic doping renders emitter 330 an N-type emitter. Referring to FIG.3B, the result of step 276 of flow chart 200 is illustrated by structure376. The result of step 276 is indicated in structure 376 by depositionof emitter 330 comprised of polycrystalline silicon. Structure 376 ofFIG. 3B, then, shows structure 374 of FIG. 3A, including interfacialoxide 332 formed on top surface 324 of base 320, after deposition ofpolycrystalline silicon emitter 330 on interfacial oxide 332.

Continuing with FIGS. 2 and 3B, step 278 of flowchart 200 comprisesdepositing photoresist 332 on top of emitter 330 and patterningphotoresist 332. Photoresist 332 is indicated in structure 378 with theword “photoresist.” Photoresist 332 is patterned in a manner known inthe art. While step 278 shows patterning using photoresist, othermethods of patterning could be used, as understood by a person ofordinary skill in the art. Referring to FIG. 3B, the result of step 278of flow chart 200 is illustrated by structure 378. Structure 378 of FIG.3B, then, shows structure 376, including interfacial oxide 332 andpolycrystalline silicon emitter 330, after the addition and patterningof photoresist 332.

Continuing with FIGS. 2 and 3B, step 280 of flowchart 200 comprisesselectively etching emitter 330 of structure 378, stripping photoresist332, and removing etch stop layer 342 from the surface of the wafer. Thepurpose of etching is to “trim” emitter 330, i.e., to localize thestructure of emitter 330 to allow access to other features andcomponents on the wafer which include, for example, the base contacts.The etching is done selectively, i.e. etchants are used which etchpolycrystalline silicon emitter 330, silicon oxynitride ARC 346 andamorphous silicon layer 344 but do not substantially etch silicondioxide etch stop layer 342. Suitable etchants with the desiredproperties are known in the art. For example, etchants that could beused include CF₄ and chlorine compounds known in the art. Referring toFIG. 3B, the result of selectively etching in step 280 of flow chart 200is illustrated by structure 380. The result of selectively etching instep 280 is shown in structure 380 where emitter 330, ARC 346, andamorphous silicon layer 344 have a width corresponding to the patterningof photoresist 332.

Continuing with step 280 of flowchart 200, the purpose of strippingphotoresist 332 is to prepare the wafer for further processing steps.Because photoresist 332 is no longer needed, it is stripped beforefurther processing of the wafer. Although photoresist 332 has been usedto etch polycrystalline silicon emitter 330, silicon oxynitride ARC 346and amorphous silicon layer 344, it will be apparent to a person ofordinary skill in the art that other methods of etching polycrystallinesilicon emitter 330, silicon oxynitride ARC 346 and amorphous siliconlayer 344 according to a pattern could be used, and that, therefore,step 280 could be modified accordingly.

Continuing with step 280 of flowchart 200, silicon oxide etch stop layer342 is removed from the surface of the wafer. The purpose of removingetch stop layer 342 is to allow access for further processing to otherfeatures and components on the wafer which include, for example, thebase contacts. Removal of silicon oxide etch stop layer 342 can beaccomplished, for example, using hydrogen fluoride. Referring to FIG.3B, the result of step 280 of flow chart 200 is illustrated by structure380. The result of step 280 is shown in structure 380 where emitter 330,ARC 346, amorphous silicon layer 344, and etch stop layer 342 havesubstantially uniform width. Etch stop layer 342 has been removed fromthe remainder of the wafer and photoresist 332 has been stripped.Structure 380 of FIG. 3B, then, shows structure 378 after formation ofinterfacial oxide 332 on top surface 324 of base 320, addition ofemitter 330 comprised of polycrystalline silicon, stripping ofphotoresist 332, and removal of etch stop layer 342.

FIG. 4 shows structure 400, which illustrates structure 100 of FIG. 1subsequent to step 280 of flow chart 200, more specifically afterformation of emitter 330 comprised of N-type polycrystalline silicon andremoval of etch stop layer 342. In particular, features and components102, 104, 106, 107, 108, 112, 114, 115, 116, 120, 122, 123, 124,142,144, 146, and 152 of structure 100 of FIG. 1 are shown respectively asfeatures and components 402, 404, 406, 407, 408, 412, 414, 415, 416,420, 422, 423, 424, 442, 444, 446, and 452 of structure 400 of FIG. 4.In addition, emitter 330, and interfacial oxide 332 of structure 380 ofFIG. 3B are shown respectively in structure 400 of FIG. 4 as emitter430, and interfacial oxide 432. Thus, FIG. 4 shows structure 400subsequent to step 280 of flow chart 200, after removal of etch stoplayer 442, and after formation of interfacial oxide 432 on top surface424 of base 420 and addition of mitter 430 comprised of N-typepolycrystalline silicon.

FIG. 4 shows structure 400 after formation of interfacial oxide 432 andemitter 430 comprised of N-type polycrystalline silicon. By addition andformation of junctions and other structures, a silicon-germanium NPN HBTis formed which includes interfacial oxide 432 and emitter 430 ofstructure 400. Because of the control of thickness and density ofinterfacial oxide 432 achieved by one embodiment of the inventiondescribed here, the gain of the silicon-germanium HBT is predictable andis uniform from one device to another on the same wafer, as well asuniform and repeatable from one wafer to another.

For example, to cause a gain of approximately 100.0 for thesilicon-germanium HBT, desirable area density for interfacial oxide 432of approximately 1*10¹⁵ to 4*10¹⁵ atoms per square centimeter anddesirable thickness for interfacial oxide 432 of approximately 9.0 to13.0 Angstroms are achieved in one embodiment of the invention. In otherembodiments of the invention, a gain of between approximately 400.0 to1000.0 can be achieved by increasing the interfacial oxide thickness orby increasing the oxide area density. For example, the thickness ofinterfacial oxide 432 can be increased to a value between 13.0 and 25.0Angstroms. On the other hand, in other embodiments of the invention, itis possible to achieve a gain below 100.0 by decreasing the thickness ofthe interfacial oxide or by lowering the oxide area density. Forexample, the thickness of interfacial oxide 432 can be decreased to avalue between 3.0 and 9.0 Angstroms, or the area density of the oxidecan be decreased to between 1*10¹³ and 1*10¹⁵.

The invention described here achieves control over the gain of the HBTby achieving control over the thickness and density of the interfacialoxide and providing uniform thickness and density of the resultinginterfacial oxide. Control over the thickness and density duringformation of the interfacial oxide is gained by controlling partialpressure of the chemical reactant used to form the interfacial oxide andby controlling temperature of the wafer during formation of theinterfacial oxide. Oxygen is used as the chemical reactant in oneembodiment of the invention described here, but other chemical reactantscould be used, for example, N₂O could be used to form an interfacialsilicon oxynitride. Partial pressure of oxygen is maintained at 0.1atmosphere, for example, in one embodiment of the invention describedhere. The low partial pressure enables the formation of oxide to proceedfor a longer period of time, which provides more control over theformation of oxide. A single wafer RTP system can be used, for example,to provide good temperature uniformity across the wafer andrepeatability of the same uniform temperature from wafer to wafer. Therelatively higher temperatures used in RTP—approximately 500° C. ascompared to the wet bench process discussed above where the typicaltemperature is approximately 60° C.—provide better temperature controland uniformity because the wafer has greater thermal stability, i.e.there is less relative temperature change, for example, at 500° C. thanat 60° C. In other words, the temperature of the wafer is easier tocontrol at higher temperatures than at very low temperatures.

Control of thickness and density of the interfacial dielectric is alsogained by using temperatures lower than approximately 650° C. Forexample, one embodiment of the invention described here uses atemperature of approximately 500° C., as discussed above. The muchhigher temperatures of approximately 900° C., used by another method,form oxides more rapidly, and the resulting oxides are thicker, moredense, and less uniform. In addition, the higher temperature ofapproximately 900° C. used by other methods causes damage to thesilicon-germanium HBT, as discussed above. Each heating of the wafercauses additional diffusion of dopants, especially boron. Heating thewafer can also cause strain relaxation in the silicon-germanium crystalas discussed above. Each cycle of heating and cooling the wafer cancause crystal dislocations in single crystal silicon and single crystalsilicon-germanium. Thus, minimizing thermal budget avoids causing damageto the bipolar device on which the interfacial dielectric is beingformed as well as other devices on the same wafer. Minimizing thermalbudget is especially important in the fabrication of silicon-germaniumsemiconductor devices. Thus, an advantage of one embodiment of theinvention described here is that it improves thermal budget by usinglower temperature RTP.

It is appreciated by the above detailed disclosure that the inventionprovides a method for formation of an interfacial dielectric, in whichthickness and density of the interfacial dielectric layer is accuratelycontrolled, and which is uniform for devices on the same wafer anduniform and repeatable from wafer to wafer. In addition, one embodimentof the invention provides a low thermal budget method of forming oxideinterfacial dielectric. Although the invention is described as appliedto the construction of a heterojunction bipolar transistor, it will bereadily apparent to a person of ordinary skill in the art how to applythe invention in similar situations where interfacial dielectric ofaccurate and uniform thickness and density is needed.

From the above description of the invention it is manifest that varioustechniques can be used for implementing the concepts of the presentinvention without departing from its scope. Moreover, while theinvention has been described with specific reference to certainembodiments, a person of ordinary skills in the art would recognize thatchanges can be made in form and detail without departing from the spiritand the scope of the invention. For example, silicon oxide interfacialdielectric can be replaced with silicon oxynitride interfacialdielectric without departing from the scope of the present invention. Asanother example, the base of the transistor, such as base 420 instructure 400, does not have to be a silicon-germanium base and in oneembodiment of the invention, the base is a silicon-only base. Thedescribed embodiments are to be considered in all respects asillustrative and not restrictive. It should also be understood that theinvention is not limited to the particular embodiments described herein,but is capable of many rearrangements, modifications, and substitutionswithout departing from the scope of the invention.

Thus, method for fabricating interfacial oxide in a transistor andrelated structure have been described.

What is claimed is:
 1. A method comprising steps of: supplying a gas ata first partial pressure for a chemical reaction with a top surface of abase in a transistor; heating said top surface of said base to a firsttemperature; forming a dielectric layer on said top surface of said baseby said chemical reaction of said gas at said first partial pressure andat said first temperature with said top surface of said base, whereinsaid first partial pressure and said first temperature determine a firstthickness and a first density of said dielectric layer, wherein saidfirst thickness and said first density of said dielectric layerdetermine a gain of said transistor.
 2. The method of claim 1 whereinsaid base comprises single crystal silicon-germanium.
 3. The method ofclaim 1 wherein said base comprises single crystal silicon.
 4. Themethod of claim 1 wherein said transistor further comprises a collectorforming a junction with said base.
 5. The method of claim 4 wherein saidtransistor further comprises an emitter forming a junction with saidbase.
 6. The method of claim 5 wherein said emitter comprisespolycrystalline silicon.
 7. The method of claim 5 wherein said basecomprises single crystal silicon-germanium, said collector comprisessingle crystal silicon, and said emitter comprises polycrystallinesilicon.
 8. The method of claim 7 wherein said transistor has a gain ofapproximately
 100. 9. The method of claim 7 wherein said first thicknessand said first density of said dielectric layer cause said gain of saidtransistor to be between approximately 400 and approximately
 1000. 10.The method of claim 4 wherein said collector comprises single crystalsilicon.
 11. The method of claim 1 wherein said first thickness and saidfirst density of said dielectric layer cause said gain of saidtransistor to be approximately
 100. 12. The method of claim 1 whereinsaid first thickness and said first density of said dielectric layercause said gain of said transistor to be between approximately 400 andapproximately
 1000. 13. The method of claim 1 wherein said dielectriclayer comprises silicon oxide.
 14. The method of claim 1 wherein saidfirst thickness of said dielectric layer is between approximately 9.0and approximately 13.0 Angstroms.
 15. The method of claim 1 wherein saidfirst thickness of said dielectric layer is between approximately 3.0and approximately 9.0 Angstroms.
 16. The method of claim 1 wherein saidfirst thickness of said dielectric layer is between approximately 13.0and approximately 25.0 Angstroms.
 17. The method of claim 1 wherein saidfirst density of said dielectric layer is between approximately 1*10¹⁵and approximately 4*10¹⁵ atoms per square centimeter.
 18. The method ofclaim 1 wherein said first density of said dielectric layer is betweenapproximately 1*10¹³ and approximately 1*10¹⁵ atoms per squarecentimeter.
 19. The method of claim 1 wherein said base comprises singlecrystal silicon.
 20. The method of claim 1 wherein said supplying stepcomprises supplying oxygen at a partial pressure of approximately 0.1atmosphere.
 21. The method of claim 1 wherein said heating stepcomprises heating said top surface of said base to a temperature ofapproximately 500° C.
 22. The method of claim 1 wherein said heatingstep comprises heating said top surface of said base to a temperature ofbetween approximately 300° C. and approximately 650° C.
 23. The methodof claim 1 wherein said supplying step comprises supplying oxygen, andwherein said heating step comprises heating said top surface of saidbase to a temperature of between approximately 300° C. and approximately650° C.
 24. The method of claim 1 wherein said gas in said supplyingstep is selected from the group consisting of N₂O, NO, and Ozone.
 25. Amethod comprising steps of: supplying a gas at a first partial pressurefor a chemical reaction with a top surface of a base in a transistor;heating said top surface of said base to a first temperature; forming adielectric layer on said top surface of said base by said chemicalreaction of said gas at said first partial pressure and at said firsttemperature with said top surface of said base, wherein a firstthickness and a first density of said dielectric layer determines a gainof said transistor, wherein said gain of said transistor is betweenapproximately 100 and approximately
 1000. 26. A method comprising stepsof: supplying a gas at a first partial pressure for a chemical reactionwith a top surface of a base in a transistor; heating said top surfaceof said base to a first temperature; forming a dielectric layer on saidtop surface of said base by said chemical reaction of said gas at saidfirst partial pressure and at said first temperature with said topsurface of said base, wherein a first thickness and a first density ofsaid dielectric layer determines a gain of said transistor, wherein saidfirst thickness of said dielectric layer is between approximately 3.0and approximately 25.0 Angstroms.
 27. A method comprising steps of:supplying a gas at a first partial pressure for a chemical reaction witha top surface of a base in a transistor; heating said top surface ofsaid base to a first temperature; forming a dielectric layer on said topsurface of said base by said chemical reaction of said gas at said firstpartial pressure and at said first temperature with said top surface ofsaid base, wherein a first thickness and a first density of saiddielectric layer determines a gain of said transistor, wherein saidfirst density of said dielectric layer is between approximately 1*10¹³and approximately 4*10¹⁵ atoms per square centimeter.
 28. A methodcomprising steps of: supplying a gas at a first partial pressure for achemical reaction with a top surface of a base in a transistor, whereinsaid first partial pressure is approximately 0.1 atmosphere; heatingsaid top surface of said base to a first temperature; forming adielectric layer on said top surface of said base by said chemicalreaction of said gas at said first partial pressure and at said firsttemperature with said top surface of said base, wherein a firstthickness and a first density of said dielectric layer determines a gainof said transistor.
 29. A method comprising steps of: supplying a gas ata first partial pressure for a chemical reaction with a top surface of abase in a transistor, said gas being selected from the group consistingof N₂O, NO, and Ozone; heating said top surface of said base to a firsttemperature; forming a dielectric layer on said top surface of said baseby said chemical reaction of said gas at said first partial pressure andat said first temperature with said top surface of said base, wherein afirst thickness and a first density of said dielectric layer determinesa gain of said transistor.